Late news deadline: August 28 Late news abstract notification: September 7
Late News papers are invited for the 33rd North American Conference on Molecular Beam Epitaxy (NAMBE 2017). All topics related to molecular beam epitaxy are appropriate, including the following:
Science and Technology of MBE (ST):
ST1: Fundamentals of MBE growth
ST2: MBE growth modifications
ST3: Materials characterization
ST4: MBE technology (e.g. in situ monitoring)
ST5: MBE as a production technology
ST6: Science and Technology of MBE Poster Session
Novel Materials (NM):
NM1: III-Arsenides, Antimonides, Phosphides
NM2: III-Nitrides and dilute-nitrides
NM3: II-VI materials and other chalcogenides (e.g. Bi2Se3)
NM4: Group IV Materials: SiGeSnC alloys, and SiC
NM5: Graphene, transition metal dichalcogenides, and other 2D materials
NM9: Hybrid materials and nanocomposites
NM10: Nanowires, quantum dots, and other low dimensional nanostructures
NM11: Other materials
NM12: Novel Materials Poster Session
MBE-Grown Devices (GD):
GD1: Photonic devices
GD2: Electronic devices
GD3: Solar cells
GD6: Device physics
GD7: MBE-Grown Devices Poster Session
Submission Guidelines ......................................................................
During the submission process, authors will be asked to (1) indicate preference for oral or poster presentation and (2) indicate if the submission is a student paper. The presenter (first author) must be a student at the time of submission to qualify as a student paper. References in the text should be written in square brackets  and must be listed after two blank lines at the end of the text of the abstract. All abstracts are limited to 2700 total characters and spaces including title, authors, abstract text.
Authors of "Late News" papers will be notified of their acceptance by September 7, 2017.
Accepted regular or late news oral presentations should be brought to the conference in electronic format (USB flash drive) for loading onto the meeting computer.
2111 Chestnut Street, Ste 145 Glenview, IL 60025 USA